1/9 june 2002 STP6NB80 STP6NB80fp n-channel 800v - 1.6 w - 5.7a to-220/to-220fp powermesh? mosfet n typical r ds (on) = 1.6 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances description using the latest high voltage mesh overlay ? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprieraty edge termi- nation structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. applications n high current, high speed switching n uninterruptible power supply (ups) n dc-dc & dc-ac converters for welding equipment and uninterruptible power supplies and motor drive absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d STP6NB80 800 v < 1.9 w 5.7 a STP6NB80fp 800 v < 1.9 w 5.7 a symbol parameter value unit STP6NB80 STP6NB80fp v ds drain-source voltage (v gs = 0) 800 v v dgr drain-gate voltage (r gs = 20 k w ) 800 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 5.7 5.7 (*) a i d drain current (continuos) at t c = 100c 3.6 3.6 (*) a i dm ( l ) drain current (pulsed) 22.8 22.8 (*) a p tot total dissipation at t c = 25c 125 40 w derating factor 1.0 0.32 w/c dv/dt (1) peak diode recovery voltage slope 4 v/ns v iso insulation withstand voltage (dc) - 2000 t stg storage temperature C 65 to 150 c t j max. operating junction temperature 150 c (1)i sd 5.76a, di/dt 200a/s, v dd v (br)dss , t j t jmax. (*)limited only by maximum temperature allowed internal schematic diagram 1 2 3 1 2 3 to-220 to-220fp
STP6NB80 / STP6NB80fp 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220 to-220fp rthj-case thermal resistance junction-case max 1.0 3.1 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5.7 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 314 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d =3 a 1.6 1.9 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =3a 4.5 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1250 pf c oss output capacitance 145 pf c rss reverse transfer capacitance 16 pf
3/9 STP6NB80 / STP6NB80fp electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 400 v, i d = 3 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 19 ns t r 9ns q g total gate charge v dd = 640v, i d = 6 a, v gs = 10v 33 47 nc q gs gate-source charge 11 nc q gd gate-drain charge 14 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d = 6 a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 11 ns t f fall time 9 ns t c cross-over time 16 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 5.7 a i sdm (2) source-drain current (pulsed) 22.8 a v sd (1) forward on voltage i sd = 6 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 6 a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 700 ns q rr reverse recovery charge 5.8 c i rrm reverse recovery current 16.5 a safe operating area for to-220 safe operating area for to-220fp
STP6NB80 / STP6NB80fp 4/9 transfer characteristics transconductance static drain-source on resistance thermal impedence for to-220 output characteristics thermal impedence for to-220fp
5/9 STP6NB80 / STP6NB80fp gate charge vs gate-source voltage source-drain diode forward characteristics normalized on resistance vs temperature normalized gate threshold voltage vs temp. capacitance variations
STP6NB80 / STP6NB80fp 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STP6NB80 / STP6NB80fp dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
STP6NB80 / STP6NB80fp 8/9 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
9/9 STP6NB80 / STP6NB80fp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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